Low

2N7000 - 

MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7000
FAIRCHILD SEMICONDUCTOR 2N7000

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Manufacturer Part No:
2N7000
Newark Part No.:
58K9650
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
400mW
:
2.1V
:
-
:
150°C
:
200mA
:
3Pins
:
10V
:
N Channel
:
-
:
TO-92
:
1.2ohm
:
60V
:
MSL 1 - Unlimited
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Product Overview

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

Applications

Audio, Signal Processing

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FAIRCHILD SEMICONDUCTOR

MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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