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2N7000 - 

MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
2N7000 - MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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Manufacturer Part No:
2N7000
Newark Part No.:
58K9650
Technical Datasheet:
(EN)
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Product Overview

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

Applications

Audio, Signal Processing

Product Information

:
N Channel
:
200mA
:
60V
:
1.2ohm
:
10V
:
2.1V
:
400mW
:
TO-92
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

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Details: 
For use as a power switch in a consumer product with a 9-volt battery. I need to estimate battery life with the device turned off. A value for room temperature is OK. Typical value is OK.
4 years, 4 months ago
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linkmode
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Answers

A: 
IDSS at VGS=0 and VDS=9V is not known, but IDSS at VGS=0 and VDS=60V is 1µA Max. Therefore IDSS should be less than 1µA for initial conditions.
4 years ago
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