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FAIRCHILD SEMICONDUCTOR  2N7000  MOSFET Transistor, N Channel, 200 mA, 60 V, 1.2 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7000
FAIRCHILD SEMICONDUCTOR 2N7000
Technical Data Sheet (436.68KB) EN See all Technical Docs

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FAIRCHILD SEMICONDUCTOR 2N7000
FAIRCHILD SEMICONDUCTOR 2N7000

Product Overview

The 2N7000 is a N-channel enhancement mode Field Effect Transistor is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance while provide rugged, reliable and fast switching performance. It can be used in most applications requiring up to 400mA DC and can deliver pulsed current up to 2A. It is also suitable for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers and other switching applications.
  • Voltage Controlled Small Signal Switch
  • Rugged and Reliable
  • High Saturation Current Capability

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
1.2ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
400mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

Find similar products  grouped by common attribute

Applications

  • Audio;
  • Signal Processing

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
Product Traceability
RoHS Compliant:
Yes
Authorized Distributor

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