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FAIRCHILD SEMICONDUCTOR  2N7000_D26Z  MOSFET Transistor, N Channel, 200 mA, 60 V, 5 ohm, 10 V, 2.1 V

FAIRCHILD SEMICONDUCTOR 2N7000_D26Z
Manufacturer Part No:
2N7000_D26Z
Newark Part No.:
78K6147
Technical Datasheet:
See all Technical Docs

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Product Overview

The 2N7000_D26Z is a 60V N-channel enhancement mode Field Effect Transistor produced using Fairchild's proprietary high cell density, DMOS technology. It has been designed to minimize on-state resistance while providing rugged, reliable and fast switching ...
  • High density cell design for extremely low RDS (ON)
  • Voltage controlled small signal switch
  • Rugged and reliable
  • High saturation current capability
  • 60V Drain gate voltage (VDGR)
  • ±20V Continuous gate source voltage (VGSS)
  • 312.5°C/W Thermal resistance, junction to ambient

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
200mA
Drain Source Voltage Vds:
60V
On Resistance Rds(on):
5ohm
Rds(on) Test Voltage Vgs:
10V
Threshold Voltage Vgs:
2.1V
Power Dissipation Pd:
400mW
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
SVHC:
No SVHC (15-Jun-2015)

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Applications

  • Industrial;
  • Motor Drive & Control;
  • Power Management

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Authorized Distributor

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