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2N5551 - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

2N5551 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

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Manufacturer Part No:
2N5551
Newark Part No.:
98K6258
Technical Datasheet:
(EN)
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Product Overview

The 2N5551 from Fairchild is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
  • Collector to emitter breakdown voltage of 160V
  • Collector to emitter saturation voltage of 200mV at 50mA collector current
  • Power dissipation of 625mW
  • DC collector current of 600mA
  • DC current gain of 30 at Ic=50mA
  • Operating junction temperature range from -55°C to 150°C

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Product Information

:
NPN
:
160V
:
150MHz
:
625mW
:
600mA
:
80hFE
:
TO-92
:
3Pins
:
150°C
:
-
:
-
:
MSL 1 - Unlimited
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Awaiting Delivery

Available for backorder to lead times shown

 
Check stock and lead times

934 Further stock expected to ship on Dec 12, 2017

More stock available week commencing 2/12/18

Contact me when back in stock

Alternatives Available

35C0727 - Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80 hFE

83C3397 - Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80

83C3405 - TRANSISTOR,BJT,NPN,160V V(BR)CEO,600MA I(C),TO-92

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