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FAIRCHILD SEMICONDUCTOR  2N5551  Bipolar (BJT) Single Transistor, General Purpose, NPN, 160 V, 150 MHz, 625 mW, 600 mA, 80 hFE

FAIRCHILD SEMICONDUCTOR 2N5551

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Product Overview

The 2N5551 from Fairchild is a through hole, NPN general purpose amplifier in TO-92 package. This device is designed for general purpose high voltage amplifiers and gas discharge display drivers.
  • Collector to emitter breakdown voltage of 160V
  • Collector to emitter saturation voltage of 200mV at 50mA collector current
  • Power dissipation of 625mW
  • DC collector current of 600mA
  • DC current gain of 30 at Ic=50mA
  • Operating junction temperature range from -55°C to 150°C

Applications

Signal Processing; Power Management; Portable Devices; Consumer Electronics; Industrial

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Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
160V
Transition Frequency ft:
150MHz
Power Dissipation Pd:
625mW
DC Collector Current:
600mA
DC Current Gain hFE:
80hFE
Transistor Case Style:
TO-92
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes

Applications

  • Signal Processing;
  • Power Management;
  • Portable Devices;
  • Consumer Electronics;
  • Industrial

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