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EXCELITAS TECH  VTE1163H  Infrared Emitter, 10 °, TO-46, 100 mA, 2.8 V, 1 µs, 1 µs

EXCELITAS TECH VTE1163H
Technical Data Sheet (253.34KB) EN See all Technical Docs

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Product Overview

The VTE1163H is a 880nm high efficiency GaAlAs Infrared Emitting Diode suitable for higher current pulse applications. It offers narrow beam angle and hermetic emitter contains a large area.
  • Double wire bonded

 

Product Information

Viewing Angle:
10°
Diode Case Style:
TO-46
Forward Current If(AV):
100mA
Forward Voltage VF Max:
2.8V
Rise Time:
1µs
Fall Time tf:
1µs
Operating Temperature Min:
-55°C
Operating Temperature Max:
125°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
Peak Wavelength:
880 nm
No. of Pins:
2
Radiant Intensity:
285 mW/Sr
MSL:
-
Supply Voltage Range:
2.8V
SVHC:
To Be Advised

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Applications

  • Wireless;
  • Automation & Process Control;
  • Sensing & Instrumentation;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Authorized Distributor

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