Low

DIODES INC.  ZTX653  Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 175 MHz, 1 W, 2 A, 100 hFE

DIODES INC. ZTX653
Technical Data Sheet (84.93KB) EN See all Technical Docs

The actual product may differ from image shown

Product Overview

The ZTX653 from Diode Inc is a through hole, NPN silicon planar medium power transistor in E-line (TO-92 compatible) package.
  • Automotive grade AEC-Q101 qualified
  • Collector to emitter Voltage (Vce) of 100V
  • Collector to base voltage of 120V
  • Power dissipation (Pd) of 1W
  • Continuous collector current of 2A
  • Collector to emitter breakdown voltage of 100V
  • Collector to emitter saturation voltage Vce(sat) of 500mV at 2A collector current
  • Operating temperature range from -55°C to 200°C

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
175MHz
Power Dissipation Pd:
1W
DC Collector Current:
2A
DC Current Gain hFE:
100hFE
Transistor Case Style:
E-Line
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Independent Distributor

Substitutes

Associated Products