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ZTX653 - 

Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 175 MHz, 1 W, 2 A, 100 hFE

DIODES INC. ZTX653

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Manufacturer Part No:
ZTX653
Newark Part No.:
95K6783
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
1W
:
-
:
100V
:
175MHz
:
200°C
:
3Pins
:
NPN
:
100hFE
:
-
:
2A
:
E-Line
:
-
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Product Overview

The ZTX653 from Diode Inc is a through hole, NPN silicon planar medium power transistor in E-line (TO-92 compatible) package.
  • Automotive grade AEC-Q101 qualified
  • Collector to emitter Voltage (Vce) of 100V
  • Collector to base voltage of 120V
  • Power dissipation (Pd) of 1W
  • Continuous collector current of 2A
  • Collector to emitter breakdown voltage of 100V
  • Collector to emitter saturation voltage Vce(sat) of 500mV at 2A collector current
  • Operating temperature range from -55°C to 200°C

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial, Automotive

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