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DIODES INC.  ZTX653  Bipolar (BJT) Single Transistor, General Purpose, NPN, 100 V, 175 MHz, 1 W, 2 A, 100 hFE

DIODES INC. ZTX653
Technical Data Sheet (84.93KB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The ZTX653 from Diode Inc is a through hole, NPN silicon planar medium power transistor in E-line (TO-92 compatible) package.
  • Automotive grade AEC-Q101 qualified
  • Collector to emitter Voltage (Vce) of 100V
  • Collector to base voltage of 120V
  • Power dissipation (Pd) of 1W
  • Continuous collector current of 2A
  • Collector to emitter breakdown voltage of 100V
  • Collector to emitter saturation voltage Vce(sat) of 500mV at 2A collector current
  • Operating temperature range from -55°C to 200°C

 

Product Information

Transistor Polarity:
NPN
Collector Emitter Voltage V(br)ceo:
100V
Transition Frequency ft:
175MHz
Power Dissipation Pd:
1W
DC Collector Current:
2A
DC Current Gain hFE:
100hFE
Transistor Case Style:
E-Line
No. of Pins:
3Pins
Operating Temperature Max:
200°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Automotive

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes
Independent Distributor

Substitutes

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