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DIODES INC.  BC807-40-7-F  Bipolar (BJT) Single Transistor, PNP, -45 V, 100 MHz, 310 mW, -500 mA, 250 hFE

DIODES INC. BC807-40-7-F
Technical Data Sheet (246.02KB) EN See all Technical Docs

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Product Overview

The BC807-40-7-F is a PNP small signal Bipolar Transistor ideally suitable for automatic insertion, switching and AF amplifier applications.
  • UL94V-0 Flammability rating
  • Epitaxial planar die construction
  • BC817 Complementary NPN type
  • Halogen-free, Green device
  • -55 to 150°C Operating temperature range

 

Product Information

Transistor Polarity:
PNP
Collector Emitter Voltage V(br)ceo:
-45V
Transition Frequency ft:
100MHz
Power Dissipation Pd:
310mW
DC Collector Current:
-500mA
DC Current Gain hFE:
250hFE
Transistor Case Style:
SOT-23
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 1 - Unlimited
Operating Temperature Min:
-65 °C
SVHC:
To Be Advised

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Applications

  • Defence, Military & Aerospace;
  • Automotive;
  • Power Management;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
MSL 1 - Unlimited
RoHS Compliant:
Yes
Independent Distributor

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