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2N7002-7-F - 

MOSFET Transistor, N Channel, 210 mA, 60 V, 13.5 ohm, 10 V, 2.5 V

DIODES INC. 2N7002-7-F

The actual product may differ from image shown

Manufacturer Part No:
2N7002-7-F
Newark Part No.:
25R5679
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
300mW
:
2.5V
:
-
:
150°C
:
210mA
:
3Pins
:
10V
:
N Channel
:
-
:
SOT-23
:
13.5ohm
:
60V
:
MSL 1 - Unlimited
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Product Overview

The 2N7002-7-F is a 60V N-channel enhancement mode Field Effect Transistor with matte tin-plated terminals. The terminals can solderable as per MIL-STD-202, method 208. This MOSFET has been designed to minimize the on-state resistance (RDS (on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. The case is made of molded plastic, "Green" molding compound (UL94V-0).
  • Low on-resistance
  • Low gate threshold voltage
  • Low input capacitance
  • Fast switching speed
  • Low input/output leakage
  • Halogen and antimony-free
  • Green device
  • Qualified to AEC-Q101 standards for high reliability

Applications

Motor Drive & Control, Power Management, Defence, Military & Aerospace

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