DIODES INC. 2DD2678-13 Bipolar (BJT) Single Transistor, NPN, 12 V, 170 MHz, 900 mW, 1.5 A, 270
Image is for illustrative purposes only. Please refer to product description.
- Manufacturer: DIODES INC.
- Newark Part No.: 25R5676
- Manufacturer Part No 2DD2678-13
Product Specifications, Documents & More
- Collector Emitter Voltage V(br)ceo: 12V
- DC Collector Current: 1.5A
- DC Current Gain hFE: 270
- MSL: MSL 1 - Unlimited
- No. of Pins: 4
- Operating Temperature Max: 150°C
- Operating Temperature Min: -55°C
- Power Dissipation Pd: 900mW
- SVHC: To Be Advised
- Transistor Case Style: SOT-89
- Transistor Polarity: NPN
- Transition Frequency Typ ft: 170MHz
Find similar products grouped by common attribute
Availability: No Longer Manufactured
Pricing is unavailable. Please contact customer services.
Legislation and Environmental
- Moisture Sensitivity Level: MSL 1 - Unlimited
RoHS Certificate of Compliance
Find products functionally similar to this one. Select one of the following links, and you will be taken to a product group page that presents all products in this category that share the given attribute.
Customer Q&A Exchange
Like to see information about this product from other customers?