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CYPRESS SEMICONDUCTOR  CY6264-70SNXC  SRAM, 64KBIT, PARALLEL, 70NS NSOIC28

CYPRESS SEMICONDUCTOR CY6264-70SNXC
Technical Data Sheet (264.51KB) EN See all Technical Docs

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Product Overview

The CY6264-70SNXC is a 8k high-performance CMOS static RAM organized as 8192 words by 8-bits. Easy memory expansion is provided by an active LOW chip enable, an active HIGH chip enable and active LOW output enable and 3-state drivers. Both devices have an automatic power-down feature reducing the power consumption by over 70% when deselected. An active LOW write enable signal controls the writing/reading operation of the memory. When CE1 and WE inputs are both LOW and CE2 is HIGH, data on the eight data input/output pins, is written into the memory location addressed by the address present on the address pins. Reading the device is accomplished by selecting the device and enabling the outputs, CE1 and OE active LOW, CE2 active HIGH, while WE remains inactive or HIGH. Under these conditions, the contents of the location addressed by the information on address pins are present on the eight data input/output pins.
  • CMOS for optimum speed/power
  • Easy memory expansion with CE1, CE2 and OE
  • TTL-compatible inputs and outputs
  • Automatic power-down when deselected

 

Product Information

Memory Size:
64Kbit
SRAM Memory Configuration:
8K x 8bit
Supply Voltage Min:
4.5V
Supply Voltage Max:
5.5V
Memory Case Style:
NSOIC
No. of Pins:
28Pins
Access Time:
70ns
Operating Temperature Min:
0°C
Operating Temperature Max:
70°C
Packaging:
Each
Product Range:
-
Automotive Qualifications Standard:
-
MSL:
MSL 3 - 168 hours
Supply Voltage Range:
4.5V to 5.5V
SVHC:
To Be Advised

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Applications

  • Computers & Computer Peripherals

Legislation and Environmental

Moisture Sensitivity Level:
MSL 3 - 168 hours
RoHS Compliant:
Yes
Authorized Distributor