Low

WOLFSPEED  C2M1000170D  Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V

WOLFSPEED C2M1000170D
Manufacturer:
WOLFSPEED WOLFSPEED
Manufacturer Part No:
C2M1000170D
Newark Part No.:
08X1011
Technical Datasheet:
See all Technical Docs

The actual product may differ from image shown

Product Overview

The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacita...
  • Drain to source voltage (Vds) of 1.7kV
  • Continuous drain current of 5A
  • Power dissipation of 69W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 1ohm at Vgs of 20V

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4.9A
Drain Source Voltage Vds:
1.7kV
On Resistance Rds(on):
0.95ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
69W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
SVHC:
To Be Advised

Find similar products  grouped by common attribute

Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Independent Distributor

Substitutes

Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V

WOLFSPEED

Awaiting Delivery
Contact us for more availability or to purchase on backorder

Price for: Each

1+ $6.12 50+ $6.03 100+ $5.89 250+ $5.85 More pricing

Buy

Associated Products