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WOLFSPEED  C2M1000170D  Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V

WOLFSPEED C2M1000170D
Technical Data Sheet (915.74KB) EN See all Technical Docs

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Product Overview

The C2M1000170D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, ultra low drain gate capacitance, higher system efficiency, reduced cooling requirements and increased system reliability. Applications include auxiliary power supplies, switch mode power supplies and high voltage capacitive loads.
  • Drain to source voltage (Vds) of 1.7kV
  • Continuous drain current of 5A
  • Power dissipation of 69W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 1ohm at Vgs of 20V

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
4.9A
Drain Source Voltage Vds:
1.7kV
On Resistance Rds(on):
0.95ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
2.4V
Power Dissipation Pd:
69W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial

Legislation and Environmental

Moisture Sensitivity Level:
-
Product Traceability
RoHS Compliant:
Yes
Independent Distributor

Substitutes

Power MOSFET, N Channel, 4.9 A, 1.7 kV, 0.95 ohm, 20 V, 2.4 V

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