Low

C2M0080120D - 

Power MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V

WOLFSPEED C2M0080120D

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Manufacturer:
WOLFSPEED WOLFSPEED
Manufacturer Part No:
C2M0080120D
Newark Part No.:
67W3046
Technical Datasheet:
(EN)
See all Technical Docs

Product Overview

The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
  • Drain to source voltage (Vds) of 1.2kV
  • Continuous drain current of 36A
  • Power dissipation of 192W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 80mohm at Vgs of 20V

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial, Motor Drive & Control, Alternative Energy

Product Information

:
N Channel
:
31.6A
:
1.2kV
:
0.08ohm
:
20V
:
3.2V
:
208W
:
TO-247
:
3Pins
:
150°C
:
-
:
-
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More stock available week commencing 9/11/17

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Alternatives Available

12X8365 - Power MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V

$16.63 $ 16.63
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Q: 
2 answers

Core Driver and Basic Board

Details: 
Could you tell me which core driver and basic board will I need if I buy this product?
1 year, 3 months ago
by
feyzullah46
 - Indianapolis, IN, USA
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A: 
It is not familar to our part for using to BOM
3 months, 3 weeks ago
by
Anonymous
 - San Jose, CA, USA
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A: 
You can refer below application note for "implementation of an isolated gate driver for evaluating SiC MOSFETs":-
http://www.cree.com/~/media/Files/Cree/Power/Application%20Notes/CPWRAN10

You can go for board having Newark code 90W2685 (MPN:CRD-001).
1 year, 3 months ago
by
TechGTC
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