Low

C2M0080120D - 

Power MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V

WOLFSPEED C2M0080120D

The actual product may differ from image shown

Manufacturer:
WOLFSPEED WOLFSPEED
Manufacturer Part No:
C2M0080120D
Newark Part No.:
67W3046
Technical Datasheet:
(EN)
See all Technical Docs

Product Information

:
208W
:
3.2V
:
150°C
:
31.6A
:
3Pins
:
20V
:
N Channel
:
-
:
TO-247
:
0.08ohm
:
1.2kV
:
-
Find similar products Choose and modify the attributes above to find similar products.

Product Overview

The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
  • Drain to source voltage (Vds) of 1.2kV
  • Continuous drain current of 36A
  • Power dissipation of 192W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 80mohm at Vgs of 20V

Applications

Power Management, Consumer Electronics, Portable Devices, Industrial, Motor Drive & Control, Alternative Energy

Substitutes

Compare Selected
Manufacturer Part Number
Newark Part No.
Manufacturer / Description
Avail
Price For
Quantity

Associated Products