WOLFSPEED  C2M0080120D  Power MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V


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  • Manufacturer:
  • Newark Part No.: 67W3046
  • Manufacturer Part No C2M0080120D

Product Overview

The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
  • Drain to source voltage (Vds) of 1.2kV
  • Continuous drain current of 36A
  • Power dissipation of 192W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 80mohm at Vgs of 20V


Power Management; Consumer Electronics; Portable Devices; Industrial; Motor Drive & Control; Alternative Energy
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Product Specifications, Documents & More

  • Continuous Drain Current Id: 31.6A
  • Drain Source Voltage Vds: 1.2kV
  • MSL: -
  • No. of Pins: 3
  • On Resistance Rds(on): 0.08ohm
  • Operating Temperature Max: 150°C
  • Operating Temperature Min: -55°C
  • Power Dissipation Pd: 208W
  • Rds(on) Test Voltage Vgs: 20V
  • SVHC: To Be Advised
  • Threshold Voltage Vgs Typ: 3.2V
  • Transistor Case Style: TO-247
  • Transistor Polarity: N Channel

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Availability:  60

  • 60 in stock for same day shipping
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  • 600 Further stock expected to ship on Mar 13, 2016
  • More stock available week commencing 3/21/16

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Price: $16.63 $16.63



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100 - 249 $16.00
250 - 499 $15.88
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2 answers

Core Driver and Basic Board

Could you tell me which core driver and basic board will I need if I buy this product?
1 year, 3 months ago
 - Indianapolis, IN, USA
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It is not familar to our part for using to BOM
3 months, 3 weeks ago
 - San Jose, CA, USA
0out of 0found this answer helpful.
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You can refer below application note for "implementation of an isolated gate driver for evaluating SiC MOSFETs":-

You can go for board having Newark code 90W2685 (MPN:CRD-001).
1 year, 3 months ago
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