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WOLFSPEED  C2M0080120D  Power MOSFET, N Channel, 31.6 A, 1.2 kV, 0.08 ohm, 20 V, 3.2 V

WOLFSPEED C2M0080120D
Technical Data Sheet (1.03MB) EN See all Technical Docs

Image is for illustrative purposes only. Please refer to product description.

Product Overview

The C2M0080120D from Cree is a 2nd generation Z-FET, through hole N channel silicon carbide power MOSFET in TO-247 package. This MOSFET features C2M SiC MOSFET technology, high blocking voltage with low On resistance, high speed switching with low capacitances, easy to parallel and simple to drive, avalanche ruggedness, resistant to latch up, higher system efficiency, reduced cooling requirements and increased power density. Applications include solar inverters, switch mode power supplies, high voltage DC-DC converters and battery chargers.
  • Drain to source voltage (Vds) of 1.2kV
  • Continuous drain current of 36A
  • Power dissipation of 192W
  • Operating junction temperature of -55°C to 150°C
  • Low on state resistance of 80mohm at Vgs of 20V

 

Product Information

Transistor Polarity:
N Channel
Continuous Drain Current Id:
31.6A
Drain Source Voltage Vds:
1.2kV
On Resistance Rds(on):
0.08ohm
Rds(on) Test Voltage Vgs:
20V
Threshold Voltage Vgs:
3.2V
Power Dissipation Pd:
208W
Transistor Case Style:
TO-247
No. of Pins:
3Pins
Operating Temperature Max:
150°C
Product Range:
-
MSL:
-
Operating Temperature Min:
-55 °C
SVHC:
To Be Advised

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Applications

  • Power Management;
  • Consumer Electronics;
  • Portable Devices;
  • Industrial;
  • Motor Drive & Control;
  • Alternative Energy

Legislation and Environmental

Moisture Sensitivity Level:
-
RoHS Compliant:
Yes

Substitutes

Associated Products