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300mW  Power Dissipation Pd  Products

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25R5667
2DB1689-7
CAD CadSoft_EAGLE Technical Data Sheet}  

2DB1689-7

DIODES INC.

TRANSISTOR, PNP, 12V, 500mA, 300mW, SOT-323

TRANSISTOR, PNP, 12V, 500mA, 300mW, SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:12V; Transition Frequency ft:300MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270 ;RoHS Compliant: Yes

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654

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25R5674
2DD2656-7
CAD CadSoft_EAGLE Technical Data Sheet}  

2DD2656-7

DIODES INC.

TRANSISTOR, NPN, 30V, 500mA, 300mW, SOT-323

TRANSISTOR, NPN, 30V, 500mA, 300mW, SOT-323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency ft:270MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:270 ;RoHS Compliant: Yes

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312

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    Supplier lead time 19 weeks
35C0693
2N2646
Technical Data Sheet}

2N2646

MULTICOMP

UNIJUNC TRANSISTOR, 0.3W, 50mA, TO-18

UNIJUNC TRANSISTOR, 0.3W, 50mA, TO-18 ; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:6mA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:125°C; MSL:-; Emitter Current:50mA

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3,569

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    Supplier lead time 17 days
35C0694
2N2647
Technical Data Sheet}
No Not RoHS compliant

2N2647

MULTICOMP

UNIJUNC TRANSISTOR, 0.3W 50mA TO-18

UNIJUNC TRANSISTOR, 0.3W 50mA TO-18; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:10mA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:125°C; MSL:-; Emitter Current:50mA ;RoHS Compliant: No

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934

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    Supplier lead time 17 days
06J8858
2N4117A-E3
Technical Data Sheet}   Product Traceability

2N4117A-E3

VISHAY SILICONIX

N CHANNEL JFET, -70V, TO-206AF

N CHANNEL JFET, -70V, TO-206AF; Transistor Type:JFET; Breakdown Voltage Vbr:-70V; Zero Gate Voltage Drain Current Idss Min:30µA; Zero Gate Voltage Drain Current Idss Max:90µA; Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V; MSL:- ;RoHS Compliant: Yes

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914

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    Supplier lead time 13 weeks
06J8861
2N4338-E3
Technical Data Sheet}   Product Traceability

2N4338-E3

VISHAY SILICONIX

N CHANNEL JFET, -57V, TO-206AA

N CHANNEL JFET, -57V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:-57V; Zero Gate Voltage Drain Current Idss Min:200µA; Zero Gate Voltage Drain Current Idss Max:600µA; Gate-Source Cutoff Voltage Vgs(off) Max:-1V; MSL:- ;RoHS Compliant: Yes

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447

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    Supplier lead time 13 weeks
06J8862
2N4339-E3
Technical Data Sheet}   Product Traceability

2N4339-E3

VISHAY SILICONIX

N CHANNEL JFET, -57V, TO-206AA

N CHANNEL JFET, -57V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:-57V; Zero Gate Voltage Drain Current Idss Min:500µA; Zero Gate Voltage Drain Current Idss Max:1.5mA; Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V ;RoHS Compliant: Yes

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2

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06J8869
2N4416A-E3
Technical Data Sheet}   Product Traceability

2N4416A-E3

VISHAY SILICONIX

N CHANNEL JFET, -36V, TO-206AF

N CHANNEL JFET, -36V, TO-206AF; Transistor Type:JFET; Breakdown Voltage Vbr:-36V; Zero Gate Voltage Drain Current Idss Min:5mA; Zero Gate Voltage Drain Current Idss Max:15mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; No. of Pins:4;RoHS Compliant: Yes

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1,058

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    Supplier lead time 13 weeks
06J8868
2N4416-E3
Technical Data Sheet}  

2N4416-E3

VISHAY SILICONIX

N CHANNEL JFET, -36V, TO-206AF

N CHANNEL JFET, -36V, TO-206AF; Transistor Type:JFET; Breakdown Voltage Vbr:-36V; Zero Gate Voltage Drain Current Idss Min:15mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; Power Dissipation Pd:300mW; No. of Pins:4; MSL:- ;RoHS Compliant: Yes

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65

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    Supplier lead time 13 weeks
67R1084
2N4856A
Technical Data Sheet}  

2N4856A

SOLID STATE

JFET Transistor, -10V, TO-18

JFET Transistor, -10V, TO-18; Transistor Type:JFET; Breakdown Voltage Vbr:-40V; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:50mA; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; No. of Pins:3 ;RoHS Compliant: Yes

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172

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    Supplier lead time 4 weeks
67R1086
2N4857A
Technical Data Sheet}
No Not RoHS compliant

2N4857A

SOLID STATE

JFET Transistor, -6V, TO-18

JFET Transistor, -6V, TO-18; Transistor Type:JFET; Breakdown Voltage Vbr:-40V; Zero Gate Voltage Drain Current Idss Min:20mA; Zero Gate Voltage Drain Current Idss Max:100mA; Gate-Source Cutoff Voltage Vgs(off) Max:-6V; No. of Pins:3 ;RoHS Compliant: No

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320

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    Supplier lead time 4 weeks
67R1088
2N4858A
Technical Data Sheet}
No Not RoHS compliant

2N4858A

SOLID STATE

JFET Transistor, 4V, TO-18

JFET Transistor, 4V, TO-18; Transistor Type:JFET; Breakdown Voltage Vbr:-40V; Zero Gate Voltage Drain Current Idss Min:8mA; Zero Gate Voltage Drain Current Idss Max:80mA; Gate-Source Cutoff Voltage Vgs(off) Max:4V; No. of Pins:3 ;RoHS Compliant: No

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90

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    Supplier lead time 4 weeks
67R1090
2N4859A
Technical Data Sheet}  

2N4859A

SOLID STATE

JFET Transistor, -10V,TO-18

JFET Transistor, -10V,TO-18; Transistor Type:JFET; Breakdown Voltage Vbr:-30V; Zero Gate Voltage Drain Current Idss Min:50mA; Zero Gate Voltage Drain Current Idss Max:50mA; Gate-Source Cutoff Voltage Vgs(off) Max:-10V; No. of Pins:3 ;RoHS Compliant: Yes

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20

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35C0717
2N4870
Technical Data Sheet}
No Not RoHS compliant

2N4870

MULTICOMP

UNIJUNC TRANSISTOR, 0.3W 50mA TO-92

UNIJUNC TRANSISTOR, 0.3W 50mA TO-92; Repetitive Peak Forward Current Itrm:1.5A; Peak Emitter Current:1µA; Valley Current Iv:5mA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:125°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: No

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556

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    Supplier lead time 17 days
35C0718
2N4871
Technical Data Sheet}

2N4871

MULTICOMP

UNIJUNC TRANSISTOR, 0.3W 50mA TO-92

UNIJUNC TRANSISTOR, 0.3W 50mA TO-92; Repetitive Peak Forward Current Itrm:1.5A; Peak Emitter Current:1µA; Valley Current Iv:7mA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:125°C; MSL:MSL 1 - Unlimited

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Awaiting Delivery

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    Supplier lead time 17 days
Contact me when back in stock
26K5298
2N5684G
Technical Data Sheet}   Product Traceability

2N5684G

ON SEMICONDUCTOR

BIPOLAR TRANSISTOR, PNP, -80V, TO-204

BIPOLAR TRANSISTOR, PNP, -80V, TO-204; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-80V; Transition Frequency ft:2MHz; Power Dissipation Pd:300mW; DC Collector Current:-50A; DC Current Gain hFE:2; No. of Pins:2; MSL:-;RoHS Compliant: Yes

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41

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    Supplier lead time 8 weeks
26K5299
2N5686G
Technical Data Sheet}   Product Traceability

2N5686G

ON SEMICONDUCTOR

BIPOLAR TRANSISTOR, NPN, 80V

BIPOLAR TRANSISTOR, NPN, 80V; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:2MHz; Power Dissipation Pd:300mW; DC Collector Current:50A; DC Current Gain hFE:2; No. of Pins:2; MSL:- ;RoHS Compliant: Yes

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481

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    Supplier lead time 8 weeks
26K5303
2N6027G
Technical Data Sheet}   Product Traceability

2N6027G

ON SEMICONDUCTOR

PROGRAMMABLE UJT, 1A, TO-92

PROGRAMMABLE UJT, 1A, TO-92; Repetitive Peak Forward Current Itrm:1A; Peak Emitter Current:1.25µA; Valley Current Iv:18µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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5,276

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  • 5,000 Further stock expected to ship on Oct 21, 2014
  • Supplier lead time 26 weeks
84K8843
2N6027RLRAG
Technical Data Sheet}   Product Traceability

2N6027RLRAG

ON SEMICONDUCTOR

PROGRAMMABLE UJT, 2A, TO-92

PROGRAMMABLE UJT, 2A, TO-92; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:5µA; Valley Current Iv:150µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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5,903

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    Supplier lead time 31 weeks
26K5304
2N6027RLRAG
Technical Data Sheet}   Product Traceability

2N6027RLRAG

ON SEMICONDUCTOR

PROGRAMMABLE UJT, 2A, TO-92, FULL REEL

PROGRAMMABLE UJT, 2A, TO-92, FULL REEL; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:5µA; Valley Current Iv:150µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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6,000

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    Supplier lead time 26 weeks
45J2501
2N6028G
Technical Data Sheet}   Product Traceability

2N6028G

ON SEMICONDUCTOR

PROGRAMMABLE UJT, 2A, TO-92

PROGRAMMABLE UJT, 2A, TO-92; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:150µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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3,767

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    Supplier lead time 26 weeks
26K5306
2N6028RLRAG
Technical Data Sheet}   Product Traceability

2N6028RLRAG

ON SEMICONDUCTOR

PROGRAMMABLE UJT, 2A, TO-92, FULL REEL

PROGRAMMABLE UJT, 2A, TO-92, FULL REEL; Repetitive Peak Forward Current Itrm:2A; Peak Emitter Current:1µA; Valley Current Iv:150µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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8,000

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    Supplier lead time 13 weeks
64R8513
2N6028RLRAG
Technical Data Sheet}   Product Traceability

2N6028RLRAG

ON SEMICONDUCTOR

PROGRAMMABLE UNIJUNCTION TRANSISTOR, 1A

PROGRAMMABLE UNIJUNCTION TRANSISTOR, 1A; Repetitive Peak Forward Current Itrm:1A; Peak Emitter Current:1µA; Valley Current Iv:150µA; Power Dissipation Pd:300mW; No. of Pins:3; Operating Temperature Max:100°C; MSL:MSL 1 - Unlimited ;RoHS Compliant: Yes

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7,898

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    Supplier lead time 21 weeks
25R5679
2N7002-7-F
CAD CadSoft_EAGLE Technical Data Sheet}  

2N7002-7-F

DIODES INC.

MOSFET, N CH, 60 V, 800mA, SOT-23

MOSFET, N CH, 60 V, 800mA, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:210mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):13.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; No. of Pins:3;RoHS Compliant: Yes

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11,985

Price for: Tape & Reel Cut 1

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    Supplier lead time 7 weeks
83H7920
2N7002LT1G
Technical Data Sheet}  

2N7002LT1G

ON SEMICONDUCTOR

N CHANNEL MOSFET, 60V, 115mA SOT-23

N CHANNEL MOSFET, 60V, 115mA SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:115mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):7.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V ;RoHS Compliant: Yes

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1,272

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    Supplier lead time 11 weeks
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