10 Products Found

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  Newark Part No. Manufacturer Part No Manufacturer / Description
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56P5423
2MBI100U4A-120-50

2MBI100U4A-120-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 150 A, 2.2 V, 540 W, 1.2 kV, Module

IGBT, DUAL, MODULE, 100A, 1200V; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2.2V; Power Dissipation Pd:540W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes

Awaiting Delivery

Price for: Each 1

1+ $93.97 25+ $89.02 50+ $85.14 100+ $82.31

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Freight Charge: $20.00 once per order

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    More stock available week commencing 6/20/16
56P5425
2MBI150U2A-060-50

2MBI150U2A-060-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 150 A, 2.35 V, 500 W, 600 V, Module

IGBT, MODULE, DUAL N CHANNEL, 600V, 150A; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2.35V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:7;RoHS Compliant: Yes

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Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

 
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    More stock available week commencing 6/20/16
56P5426
2MBI150U4A-120-50

2MBI150U4A-120-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 200 A, 2.3 V, 735 W, 1.2 kV, Module

IGBT, DUAL, MODULE, 150A, 1200V; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.3V; Power Dissipation Pd:735W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes

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Price for: Each 1

1+ $127.46 25+ $120.75 50+ $115.48 100+ $111.65

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Freight Charge: $20.00 once per order

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56P5428
2MBI200S-120-50

2MBI200S-120-50

FUJI ELECTRIC

IGBT Array & Module Transistor, Dual Pack, N Channel, 200 A, 2.6 V, 1.5 kW, 1.2 kV, Module

IGBT, DUAL, MODULE, 200A, 1200V, NPT; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes

No Longer Manufactured

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No Longer Manufactured

76R7059
2MBI200SB-120-50

2MBI200SB-120-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 200 A, 2.6 V, 1.5 kW, 1.2 kV, Module

IGBT, 2 PACK MODULE 1200V, 200A, M235; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.6V; Power Dissipation Pd:1.5kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7 ;RoHS Compliant: Yes

No Longer Manufactured

Pricing is unavailable. Please contact customer services.

No Longer Manufactured

56P5429
2MBI200U2A-060-50

2MBI200U2A-060-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 200 A, 2.45 V, 660 W, 600 V, Module

IGBT, DUAL, MODULE, 200A, 600V, NPT; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.45V; Power Dissipation Pd:660W; Collector Emitter Voltage V(br)ceo:600V; No. of Pins:7 ;RoHS Compliant: Yes

Price for: Each 1

1+ $134.21 25+ $127.15 50+ $121.60 100+ $117.56

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Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

 
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76R7060
2MBI200U4H-120-50

2MBI200U4H-120-50

FUJI ELECTRIC

IGBT Array & Module Transistor, N Channel, 200 A, 2.05 V, 1.04 kW, 1.2 kV, Module

IGBT, 2 PACK MODULE 1200V, 200A, M234; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:1.04kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:7;RoHS Compliant: Yes

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Freight Charge: $20.00 once per order

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84R7176
FD150R12RT4

FD150R12RT4

INFINEON

IGBT Array & Module Transistor, N Channel, 150 A, 2.05 V, 790 W, 1.2 kV

IGBT Module, 1.2KV, 150A, MODULE; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):2.05V; Power Dissipation Pd:790W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5 ;RoHS Compliant: Yes

No Longer Manufactured

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No Longer Manufactured

84R7214
FS150R12PT4

FS150R12PT4

INFINEON

IGBT Array & Module Transistor, N Channel, 150 A, 1.2 kV, 680 W, 1.2 kV, Module

IGBT Module; Transistor Polarity:N Channel; DC Collector Current:150A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:680W; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20; Module Configuration:Six ;RoHS Compliant: Yes

Not Currently Stocked

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Not Currently Stocked

84R7216
FS200R12PT4

FS200R12PT4

INFINEON

IGBT Array & Module Transistor, N Channel, 200 A, 1.2 kV, 1 kW, 1.2 kV, Module

IGBT Module; Transistor Polarity:N Channel; DC Collector Current:200A; Collector Emitter Saturation Voltage Vce(on):1.2kV; Power Dissipation Pd:1kW; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:20; Module Configuration:Six ;RoHS Compliant: Yes

Pricing is unavailable. Please contact customer services.

Freight Charge: $20.00 once per order

Delivery in 5-7 days for in stock items

 
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    More stock available week commencing 5/23/16
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